Addressing challenges in ultra-wide bandgap semiconductor-based photodetectors

Ultrawide bandgap (UWBG) semiconductors, such as Ga2O3, diamond, Al x Ga1-x N/AlN, have shown significant potential for solar blind ultraviolet photodetection, with applications in environmental monitoring, chemical/biological analysis, industrial processes and military technologies. Over the past decades, significant progress has been made in synthesizing high-performance UWBG semiconductors, which has facilitated the development of various high-performance solar blind photodetectors (SBPDs). However, the preparation of these semiconductors often requires complex growth techniques and high growth temperatures, which can hinder their application. Furthermore, the growth process of these materials often introduces unavoidable oxygen vacancies (Vo), leading to persistent photoconductivity (PPC), a phenomenon that severely hinders device performance.

The aim of this research topic is to explore and address the key challenges in the field of UWBG semiconductor-based SBPDs. This includes investigating the effects of different growth techniques and conditions on the quality and performance of UWBG semiconductors, as well as exploring innovative approaches to suppress Vo electrical activity and improve device performance. The study also aims to evaluate the current state of device performance for SBPDs using these UWBG semiconductors in various device configurations, and to guide future research efforts in this crucial domain.

To gain further insight into the development and application of UWBG semiconductor-based SBPDs, we welcome articles covering, but not limited to, the following topics:

– The synthesis and characterization of high-performance UWBG semiconductors.

– The development and evaluation of different device architectures for SBPDs.

– The investigation of the effects of different growth techniques and conditions on the quality and performance of UWBG semiconductors.

– The exploration of innovative approaches to suppress Vo electrical activity and improve device performance.

– The evaluation of the current state of device performance for SBPDs using UWBG semiconductors in different device configurations.

– The exploration of potential applications of UWBG semiconductor-based SBPDs in various fields.

Keywords: UWBG semiconductors, semiconductor-based photodetectors, solar blind ultraviolet photodetection

Important note: All contributions to this research topic must be within the scope of the section and journal to which they are submitted, as defined in their mission statements. Frontiers reserves the right to divert an out-of-scope manuscript to a more appropriate section or journal at any stage of peer review.

Ultrawide bandgap (UWBG) semiconductors, such as Ga2O3, diamond, Al x Ga1-x N/AlN, have shown significant potential for solar blind ultraviolet photodetection, with applications in environmental monitoring, chemical/biological analysis, industrial processes and military technologies. Over the past decades, significant progress has been made in synthesizing high-performance UWBG semiconductors, which has facilitated the development of various high-performance solar blind photodetectors (SBPDs). However, the preparation of these semiconductors often requires complex growth techniques and high growth temperatures, which can hinder their application. Furthermore, the growth process of these materials often introduces unavoidable oxygen vacancies (Vo), leading to persistent photoconductivity (PPC), a phenomenon that severely hinders device performance.

The aim of this research topic is to explore and address the key challenges in the field of UWBG semiconductor-based SBPDs. This includes investigating the effects of different growth techniques and conditions on the quality and performance of UWBG semiconductors, as well as exploring innovative approaches to suppress Vo electrical activity and improve device performance. The study also aims to evaluate the current state of device performance for SBPDs using these UWBG semiconductors in various device configurations, and to guide future research efforts in this crucial domain.

To gain further insight into the development and application of UWBG semiconductor-based SBPDs, we welcome articles covering, but not limited to, the following topics:

– The synthesis and characterization of high-performance UWBG semiconductors.

– The development and evaluation of different device architectures for SBPDs.

– The investigation of the effects of different growth techniques and conditions on the quality and performance of UWBG semiconductors.

– The exploration of innovative approaches to suppress Vo electrical activity and improve device performance.

– The evaluation of the current state of device performance for SBPDs using UWBG semiconductors in different device configurations.

– The exploration of potential applications of UWBG semiconductor-based SBPDs in various fields.

Keywords: UWBG semiconductors, semiconductor-based photodetectors, solar blind ultraviolet photodetection

Important note: All contributions to this research topic must be within the scope of the section and journal to which they are submitted, as defined in their mission statements. Frontiers reserves the right to divert an out-of-scope manuscript to a more appropriate section or journal at any stage of peer review.